Typical Characteristics T C = 25°C unless otherwise noted
1.2
200
CURRENT LIMITED
1.0
0.8
0.6
0.4
160
120
80
BY PACKAGE
0.2
40
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T C , CASE TEMPERATURE ( o C)
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
T C , CASE TEMPERATURE ( o C)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
1
0.5
0.2
0.1
0.05
0.02
0.01
P DM
0.1
t 1
t 2
NOTES:
0.01
SINGLE PULSE
DUTY FACTOR: D = t 1 /t 2
PEAK T J = P DM x Z θ JC x R θ JC + T C
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
T C = 25 o C
FOR TEMPERATURES
ABOVE 25 o C DERATE PEAK
CURRENT AS FOLLOWS:
V GS = 10V
I = I 25
175 - T C
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
100
50
IN THIS REGION
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
? 2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
3
www.fairchildsemi.com
相关PDF资料
FDP038AN06A0 MOSFET N-CH 60V 80A TO-220AB
FDI3632 MOSFET N-CH 100V 80A TO-262AB
ASVMB-150.000MHZ-XY-T OSC MEMS 150.000 MHZ SMD
ASVMB-133.333MHZ-XY-T OSC MEMS 133.333 MHZ SMD
0638951000 MINI MAC APPLICATOR METAL STRIP
0638934300 MINI MAC APPLICATOR
ASEMB-150.000MHZ-XY-T OSC MEMS 150.000 MHZ SMD
0638923000 MINI MAC APPLICATOR
相关代理商/技术参数
FDP047AN08A0 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDP047AN08A0_F102 功能描述:MOSFET SNGL NCH 75V 4.7MOHM ULTRAFET TRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP047AN08A0_G 制造商:Fairchild Semiconductor Corporation 功能描述:75V N-Channel PowerTrenchR MOSFET
FDP047N08 功能描述:MOSFET 75V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP047N10 功能描述:MOSFET 100V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP047N10_12 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 164A, 4.7mW
FDP050AN06A0 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP050AN06A0_F085 功能描述:MOSFET N-Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube